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| 9014 NPN SILICON TRANSISTOR TO 92 FEATURES Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO : 50 1.EMITTER 2.BASE 3.COLLECTOR 123 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain(note) Collector-emitter saturation voltage Base-emitter saturation voltage Tamb=25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE 1 unless otherwise specified Test Ic= 100 Ic= 0. 1 IE= 100 VCB=50 VCE=35 VEB= VCE= 3 5 conditions A mA A V, V, V V, IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 IC= 1mA IB= 5 mA IB= 5mA IC= 10mA 150 MHz 60 MIN 50 45 5 0.1 0.1 0.1 1000 0.3 1 V V TYP MAX UNIT V V V A A A VCE(sat) VBE(sat) IC= 100mA, IC= 100 mA, VCE= 5 V, Transition frequency fT f =30MHz CLASSIFICATION OF HFE(1) Rank Range A 60-150 B 100-300 C 200-600 D 400-1000 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: wsccltd@hkstar.com |
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